Scaling Nanowire-Supported GaN Quantum Dots to the Sub-10 nm Limit, Yielding Complete Suppression of the Giant Built-in Potential

The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which extremely promising for realization UV photonics in general and room-temperature single photon generation particular. While GaN-NWQDs have several attributes, the crucial challenge exploiting their full potential, to reduce lateral dimensions QDs, order exciton Bohr radius GaN. Also critical suppress built-in electric field due spontaneous piezoelectric polarization, adversely affects radiative recombination lifetime. We report here innovation a simple yet powerful single-step epitaxial growth technique, achieve both these targets. By combining controlled on-demand thermal decomposition nanowires, with our previously developed strategy inhibiting same via AlN capping, we demonstrate that NWQD-diameter can indeed be reduced truly strong-quantum-confinement limit. In ultrascaled show fields are almost completely suppressed. NWQD fabrication this work may pave way highly efficient classical UV-emitters based on